Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes
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Title
Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 9, Pages 093102
Publisher
AIP Publishing
Online
2011-05-03
DOI
10.1063/1.3580510
References
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Related references
Note: Only part of the references are listed.- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
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- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
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- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
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- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
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- Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
- (2008) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
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