Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy

Published 2014 View Full Article

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Title
Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 5S1, Pages 05FA13
Publisher
Japan Society of Applied Physics
Online
2014-04-25
DOI
10.7567/jjap.53.05fa13

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