Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles

Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications

(2018) Aize Hao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Enhanced resistive switching characteristics in Al2O3memory devices by embedded Ag nanoparticles

(2017) Leiwen Gao et al.   NANOTECHNOLOGY

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

(2017) Yu Li et al.   Small

Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe2O4 thin films

(2017) Aize Hao et al.   RSC Advances

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

(2016) Dong Li et al.   ACS Applied Materials & Interfaces

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device

(2016) Lei Zhang et al.   APPLIED SURFACE SCIENCE

Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb:SrTiO3 heterostructures

(2015) Qiangwen Wang et al.   APPLIED PHYSICS LETTERS

Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications

(2015) Muhammad Ismail et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

(2015) Kun Zhang et al.   Nanoscale

Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt

(2014) Dooho Choi et al.   APPLIED PHYSICS LETTERS

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

(2014) D. L. Xu et al.   APPLIED PHYSICS LETTERS

Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

(2014) Umesh Chand et al.   IEEE ELECTRON DEVICE LETTERS

Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device

(2014) Yu-Lung Chung et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(2013) Z. Q. Wang et al.   Nanoscale

Electric field induced simultaneous change of resistance and magnetization in an Ag/Ti/Fe3O4/Pt device

(2013) Shu-xia Ren et al.   Journal of Materials Chemistry C

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

(2012) Wei Hu et al.   APPLIED PHYSICS LETTERS

Structural and magnetic properties of biaxially textured NiFe2O4 thin films grown on c-plane sapphire

(2012) Safoura Seifikar et al.   JOURNAL OF APPLIED PHYSICS

Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

(2012) Wei Hu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors

(2010) Jong Yeog Son et al.   ACS Nano

Raman study of NiFe2O4nanoparticles, bulk and films: effect of laser power

(2010) Anju Ahlawat et al.   JOURNAL OF RAMAN SPECTROSCOPY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS