Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

Title
Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 18, Pages 183504
Publisher
AIP Publishing
Online
2018-05-02
DOI
10.1063/1.5029327

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