Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4953194
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Funding
- Natural Science Foundation of Jiangsu Province [BK2015020024]
- Basic Research Program of Jiangsu Education Department [15KJB430012]
- Changzhou Science and Technology Bureau [CJ20159049]
- Open Fund of State Key Laboratory of Functional Materials for Informatics [KYZ14031]
- Scientific Research Fund Project of Jiangsu University of Technology [KYY14014]
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Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization temperature (similar to 250 degrees C), larger crystallization activation energy (3.53 eV), and better data retention ability (166 degrees C for 10 years). N-doping also broadened the band gap and refined grain size. The reversible resistance transition could be achieved by an electric pulse as short as 8 ns for the PCM cell based on N-doped Sb material. A lower operation power consumption (the energy for RESET operation 2.2 x 10(-12) J) was obtained. In addition, N-doped Sb material showed a good endurance of 1.8 x 10(5) cycles. Published by AIP Publishing.
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