Article
Materials Science, Multidisciplinary
Shogo Hatayama, Yasunori Abe, Daisuke Ando, Yuji Sutou
Summary: Reducing the energy required to operate PCRAM technology is a major challenge, and one strategy is to increase the resistance of the memory device in the crystalline state of the phase-change material (PCM). The use of a LaB6 electrode in CrGT-based memory devices significantly increases the resistance compared to using a W electrode, indicating a potential for lower operation energy requirements.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Milad Jourshabani, Byeong-Kyu Lee
Summary: This study synthesized a novel CN/SiO2/WO3 photocatalyst with two different contact features, providing deep insights into the impact of SiO2 and the amorphous/amorphous interface on charge carriers and the role in photocatalytic mechanisms.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Zilei Wang, Jian He, Wenjie Wang, Hao Lin, Zhiyuan Xu, Qiming Liu, Shanglong Peng, Juan Hou, Deyan He, Pingqi Gao
Summary: This study investigates solution-processed alkali metal acetates as effective electron-selective contacts in c-Si solar cells, demonstrating a significant reduction in contact resistivity and high-quality surface passivation. The development of such electron-selective contacts shows enormous potential for low-cost and high-efficiency c-Si solar cells.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Yuki Hibino, Tatsuya Yamamoto, Kay Yakushiji, Tomohiro Taniguchi, Hitoshi Kubota, Shinji Yuasa
Summary: This study presents a solution for developing high-performance SOT-MRAM by using amorphous WTaB alloys as spin Hall materials. The amorphous alloys exhibit high spin Hall effect and excellent thermal annealing stability, meeting the requirements of SOT-MRAM.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Kyoungdu Kim, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, Jaewon Jang
Summary: In this study, sol-gel-processed amorphous-phase ZrO2 was utilized as an active channel material to enhance the resistive switching properties of resistive random access memories (RRAMs), demonstrating improved high-resistance state to low-resistance state ratio, retention, and endurance characteristics without degradation. The amorphous-phase nature of ZrO2 resulted in efficient carrier scattering, leading to low carrier mobility and the lowest leakage current, thus affecting the high-resistance state values.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Engineering, Electrical & Electronic
Zhikuang Cai, Xiang Wan, Xiaoyan Liu, Qingying Ren, Xiaojuan Lian, Lei Wang
Summary: This article reviews the modeling methods of PCRAM, elaborates on the strategies for simulating the electrothermal and phase-change processes of phase-change materials, and discusses the application fields of these models.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Review
Physics, Multidisciplinary
Bo Liu, Tao Wei, Jing Hu, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, Zhitang Song
Summary: The era of information explosion has brought about the need for long-term storage and random access, and nonvolatile resistive memories such as phase-change random access memory (PCRAM) are considered as the best solutions for next generation non-volatile memories. PCRAM, with its high speed, good data retention, high density, and low power consumption, has broad commercial prospects in in-memory computing applications.
Article
Materials Science, Multidisciplinary
Wenxian Wang, Lun Cai, Lanxiang Meng, LinKun Zhang, Nuo Chen, Hui Shen, Zongcun Liang
Summary: Dopant-free carrier-selective contacts have attracted attention for efficient c-Si photovoltaics due to their low-temperature simple process and better carrier selectivity. With the incorporation of CeF3 as the electron transport layer, a higher conversion efficiency of 21.27% has been achieved compared to 16.89% without CeF3. Utilizing lanthanide fluorides, including CeF3, offers a good choice for efficient and cost-effective electron-selective contacts for optical-electrical devices.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Chemistry, Inorganic & Nuclear
Shuai Cao, Xiaoming Fan, Li Wei, Ting Cai, Yuping Lin, Zeheng Yang
Summary: OER is a critical reaction in renewable and clean electrochemical energy systems, and a new Fe-doped NixP electrocatalyst has been developed to reduce the overpotential and improve the reaction kinetics. The Fe-doped NixP electrocatalyst shows excellent performance in terms of low overpotential and high reaction rate.
DALTON TRANSACTIONS
(2023)
Article
Engineering, Electrical & Electronic
Qiang Huo, Yiming Yang, Yiming Wang, Dengyun Lei, Xiangqu Fu, Qirui Ren, Xiaoxin Xu, Qing Luo, Guozhong Xing, Chengying Chen, Xin Si, Hao Wu, Yiyang Yuan, Qiang Li, Xiaoran Li, Xinghua Wang, Meng-Fan Chang, Feng Zhang, Ming Liu
Summary: Three-dimensional computing-in-memory circuits based on vertical resistive random-access memory and complementary metal-oxide-semiconductor technologies can provide efficient hardware for artificial neural networks. Non-volatile computing-in-memory macros based on two-dimensional arrays of memristors are useful for the development of AI edge devices. The reported macro offers high energy efficiency for 3D vector-matrix multiplication operations and improves accuracy in brain MRI edge detection and CIFAR-10 dataset inference compared to conventional methods.
NATURE ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang, Shuang Li, Jian Zhou, Oktay Aktas, Ming Xu, Volker L. Deringer, Riccardo Mazzarello, En Ma, Wei Zhang
Summary: The layered crystal structure of Cr2Ge2Te6 exhibits ferromagnetic ordering in the two-dimensional limit, making it a promising candidate for spintronic applications. However, the non-crystalline phase induced by external voltage pulses may lead to changes in the magnetic properties. This study demonstrates that Cr2Ge2Te6 preserves its spin-polarized nature in the amorphous phase but undergoes a magnetic transition to a spin glass state at low temperatures. Quantum-mechanical computations reveal that this transition is due to strong distortions in the Cr-Te-Cr bonds and the overall increase in disorder upon amorphization. The tunable magnetic properties of Cr2Ge2Te6 can be utilized for multifunctional magnetic phase-change devices that can switch between crystalline and amorphous states.
Review
Nanoscience & Nanotechnology
Qiang Wang, Gang Niu, Wei Ren, Ruobing Wang, Xiaogang Chen, Xi Li, Zuo-Guang Ye, Ya-Hong Xie, Sannian Song, Zhitang Song
Summary: Utilizing emerging memristors for neuro-inspired computing has become increasingly important for artificial intelligence in the era of big data. PCRAM, with its maturity in technology and superior device performance, is a promising candidate for both nonvolatile memories and neuro-inspired computing. Efforts have been made to achieve biological behavior using PCRAM and to clarify its working mechanism, with the goal of further improving device performances.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Jongin Cha, Jangyup Son, Jongill Hong
Summary: This study investigates the impact of bottom-electrode contact on graphene devices and demonstrates the ability to achieve extremely low contact resistivity. The enhanced density of states (DOS) at the bottom-electrode contact is the key factor for achieving low resistivity.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Optics
Leon Messner, Elizabeth Robertson, Luisa Esguerra, Kathy Luedge, Janik Wolters
Summary: The importance of researching multiplexed quantum memory systems for optical quantum computation and communication technologies is highlighted, as well as the current challenge of systems that only perform well with elaborate preparation. In this study, a multiplexed random-access memory is demonstrated to store up to four optical pulses using electromagnetically induced transparency in warm cesium vapor. The results show a mean internal storage efficiency of 36% and a 1/e lifetime of 3.2 microsecond, facilitating the implementation of multiplexed memories in future quantum communication and computation infrastructures.
Article
Engineering, Electrical & Electronic
Xiaojuan Lian, Lei Wang
Summary: Researchers have successfully achieved various Boolean logic functions on a blade-type PCRAM, demonstrating its potential for in-memory computing and neuromorphic circuits.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Milos Krbal, Alexander V. Kolobov, Paul Fons, Yuta Saito, George Belev, Safa Kasap
Summary: This study investigates the structural transformation from an amorphous phase to a one-dimensional vdW crystal and identifies a unique feature associated with vdW bonds using x-ray absorption spectroscopy. The researchers believe that this approach can be applied to study other one-dimensional vdW solids.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Takumi Fukuda, Ryota Kaburauchi, Yuta Saito, Kotaro Makino, Paul Fons, Keiji Ueno, Muneaki Hase
Summary: In this study, coherent phonon spectroscopy is used to investigate the relationship between structural phase transitions and photo-thermal effects in polymorphic MoTe2 single crystals. The results show that increasing excitation density leads to tellurium segregation, but no structural phase transition is observed among the polymorphs of MoTe2. However, higher photon-energy excitation is found to suppress tellurium segregation.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Shin-young Kang, Soo-min Jin, Ju-young Lee, Dae-seong Woo, Tae-hun Shim, In-ho Nam, Jea-gun Park, Yuji Sutou, Yun-heub Song
Summary: This study fabricates and investigates a two-terminal artificial synapse based on GeTe/Sb2Te3 material, which exhibits excellent multilevel resistance switching by controlling the movement of Ge atoms. The optimal pulse scheme and GeTe/Sb2Te3 layer are used to achieve tunable analog weight update, and nonlinearity of conductance states is achieved for long-term potentiation and depression.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Shogo Hatayama, Yuta Saito, Noriyuki Uchida
Summary: This study aimed to add Te to a HfO2 insulator to convert the electric conduction mechanism to PF conduction for realizing a selector function. By adjusting the Te content, both the optical bandgap and electrical properties were modified. Hf0.24O0.55Te0.21 exhibited PF conduction and achieved a selectivity of approximately two orders of magnitude.
Article
Chemistry, Multidisciplinary
Milos Krbal, Vit Prokop, Jan Prikryl, Jhonatan Rodriguez Pereira, Igor Pis, Alexander V. Kolobov, Paul J. Fons, Yuta Saito, Shogo Hatayama, Yuji Sutou
Summary: By using a thin amorphous layer of sulfur-rich MoS2, well-ordered crystalline MoS2 films can be grown on a Si/SiOx nontemplating substrate, with the amorphous MoS4 phase exhibiting better crystallinity compared to amorphous MoS2.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Yi Shuang, Qian Chen, Mihyeon Kim, Yinli Wang, Yuta Saito, Shogo Hatayama, Paul Fons, Daisuke Ando, Momoji Kubo, Yuji Sutou
Summary: 2D van der Waals (vdW) transition metal di-chalcogenides (TMDs) have attracted significant attention in the nonvolatile memory field due to their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. In this study, low-Tm 2D vdW TM tetra-chalcogenides were investigated, and NbTe4 was identified as a promising candidate with an ultra-low Tm of around 447°C. The simultaneous presence of a low Tm and a high crystallization temperature Tc in NbTe4 can potentially resolve issues in current phase-change memory compounds.
ADVANCED MATERIALS
(2023)
Article
Multidisciplinary Sciences
Bokusui Nakayama, Hikaru Nagase, Hiromori Takahashi, Yuta Saito, Shogo Hatayama, Kotaro Makino, Eiji Yamamoto, Toshiharu Saiki
Summary: Indirect interactions via shared memory deposited on the field play a crucial role in collective motions. We propose a pheromone-based autonomous agent system that mimics the collective behavior of ants and bacteria. This system combines the phase-change behavior of self-propelled Janus particles and AC electroosmotic flow to create pheromone-like trails that attract other particles.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2023)
Article
Materials Science, Multidisciplinary
Shogo Hatayama, Yuta Saito, Paul Fons, Yi Shuang, Mihyeon Kim, Yuji Sutou
Summary: This paper investigates the electronic structure of amorphous Si0.29Te0.71 using hard X-ray photoelectron spectroscopy (HAXPES) and density functional theory (DFT) calculations. It reveals that the amorphous network of Si0.29Te0.71 is composed of Te-Te, Te-Si, and Si-Si bonding. DFT calculations show the contributions of Si3p and Te5p states to bonding, while occupied non-bonding Te5p states form the top of the valence state. The presence of Te-Te dimers significantly influences the OTS behavior.
Article
Chemistry, Analytical
Yuka Takamatsu, Chizuru Yamato, Masashi Kuwahara, Yuta Saito, Toshiharu Saiki
Summary: We introduce a platform for manipulating sessile droplets on a light-absorbing surface using localized laser irradiation. The manipulation is achieved through solutocapillary Marangoni flow caused by a concentration gradient in a binary mixture liquid. The two-dimensional confinement of the mixture enables stable formation, deformation, and transport of the droplet. Additionally, we present a method to sustain the droplet in the absence of laser irradiation by bridging it between the top and bottom walls of a slit.
Article
Chemistry, Multidisciplinary
Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons
Summary: This article reports on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements demonstrated that the films exhibited semiconducting properties suitable for electronic applications. Feasibility studies involving device structures also highlighted the potential of GeTe2 as an electronic material.
MATERIALS HORIZONS
(2023)
Article
Chemistry, Multidisciplinary
Takashi Harumoto, Hiroyuki Fujiki, Ji Shi, Yoshio Nakamura, Yuji Sutou
Summary: This research demonstrates a novel current controlled negative differential resistance (NDR) device based on phase transformation, providing more possibilities for material selection. The experimental demonstration of NDR induced by phase transformation has a significant impact on the development of NDR devices. This phase transformation-based NDR device is significantly different from typical devices such as tunnel diodes and memristors, and has the potential for evaluating hydrogen storage properties.
MATERIALS HORIZONS
(2023)
Article
Chemistry, Multidisciplinary
Takashi Harumoto, Hiroyuki Fujiki, Ji Shi, Yoshio Nakamura, Yuji Sutou
Summary: This experimental demonstration introduces a novel current controlled negative differential resistance (NDR) device based on phase transformation, showing that phase transformation can induce NDR. It opens up more material options for NDR devices. Unlike typical NDR devices, the observed NDR property of this prototype device depends strongly on the current sweep speed and shows no current polarity dependence.
MATERIALS HORIZONS
(2023)
Article
Materials Science, Multidisciplinary
Shogo Hatayama, Yuta Saito, Kotaro Makino, Noriyuki Uchida, Yi Shuang, Shunsuke Mori, Yuji Sutou, Milos Krbal, Paul Fons
Summary: This study annealed amorphous Mo-Te films to obtain crystalline phase, while eliminating excess Te through sublimation. It also investigated the crystallization mechanism and developed a method for large-area MoTe2 film deposition.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
