Design Rules for Phase-Change Materials in Data Storage Applications

Disorder-induced localization in crystalline phase-change materials

(2011) T. Siegrist et al.   NATURE MATERIALS

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Atomic structure of amorphous and crystallized Ge15Sb85

(2010) Peter Zalden et al.   JOURNAL OF APPLIED PHYSICS

Linking rigidity transitions with enthalpic changes at the glass transition and fragility: insight from a simple oscillator model

(2010) Matthieu Micoulaut   JOURNAL OF PHYSICS-CONDENSED MATTER

Influence of stress and strain on the kinetic stability and phase transitions of cubic and pseudocubic Ge-Sb-Te materials

(2010) Matthias N. Schneider et al.   PHYSICAL REVIEW B

Understanding amorphous phase-change materials from the viewpoint of Maxwell rigidity

(2010) M. Micoulaut et al.   PHYSICAL REVIEW B

Bonding origin of optical contrast in phase-change memory materials

(2010) B. Huang et al.   PHYSICAL REVIEW B

First-principles study of liquid and amorphousSb2Te3

(2010) S. Caravati et al.   PHYSICAL REVIEW B

Signature of Tetrahedral Ge in the Raman Spectrum of Amorphous Phase-Change Materials

(2010) Riccardo Mazzarello et al.   PHYSICAL REVIEW LETTERS

In-situRaman Scattering Spectroscopy for a Super Resolution Optical Disk during Readout

(2009) Masashi Kuwahara et al.   Applied Physics Express

Threshold field of phase change memory materials measured using phase change bridge devices

(2009) Daniel Krebs et al.   APPLIED PHYSICS LETTERS

Epitaxy of Ge–Sb–Te phase-change memory alloys

(2009) Wolfgang Braun et al.   APPLIED PHYSICS LETTERS

Structure of liquid phase change material AgInSbTe from density functional/molecular dynamics simulations

(2009) J. Akola et al.   APPLIED PHYSICS LETTERS

Scanning tunneling microscopy and spectroscopy of the phase change alloy Ge1Sb2Te4

(2009) D. Subramaniam et al.   APPLIED PHYSICS LETTERS

Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation

(2009) Ramanathaswamy Pandian et al.   APPLIED PHYSICS LETTERS

Thermal conductivities and phase transition temperatures of various phase-change materials measured by the 3ω method

(2009) W. P. Risk et al.   APPLIED PHYSICS LETTERS

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Influence of interfaces and doping on the crystallization temperature of Ge–Sb

(2009) Simone Raoux et al.   APPLIED PHYSICS LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling

(2009) Suyoun Lee et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

Optical nonlinear absorption characteristics of AgInSbTe phase change thin films

(2009) Jing Liu et al.   JOURNAL OF APPLIED PHYSICS

Vibrational properties of hexagonal Ge2Sb2Te5from first principles

(2009) G C Sosso et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Vibrational properties of crystalline Sb2Te3from first principles

(2009) G C Sosso et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

First-principles study of crystalline and amorphous Ge2Sb2Te5and the effects of stoichiometric defects

(2009) S Caravati et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Atomic layer deposition of Ge2Sb2Te5 thin films

(2009) Mikko Ritala et al.   MICROELECTRONIC ENGINEERING

Peierls distortion as a route to high thermoelectric performance in In4Se3-δ crystals

(2009) Jong-Soo Rhyee et al.   NATURE

Local structure of amorphous GeSbTe alloys: Ge umbrella flipvs. DFT simulations

(2009) A. V. Kolobov et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Structure of the liquid and the crystal of the phase-change materialSnSe2: First-principles molecular dynamics

(2009) M. Micoulaut et al.   PHYSICAL REVIEW B

Structure of amorphousGe8Sb2Te11:GeTe-Sb2Te3alloys and optical storage

(2009) J. Akola et al.   PHYSICAL REVIEW B

Improved modeling of liquidGeSe2: Impact of the exchange-correlation functional

(2009) Matthieu Micoulaut et al.   PHYSICAL REVIEW B

Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change materialGe2Sb2Te5

(2009) J. Akola et al.   PHYSICAL REVIEW B

Optical properties of pseudobinary GeTe,Ge2Sb2Te5,GeSb2Te4,GeSb4Te7, andSb2Te3from ellipsometry and density functional theory

(2009) Jun-Woo Park et al.   PHYSICAL REVIEW B

Initial Structure Memory of Pressure-Induced Changes in the Phase-Change Memory AlloyGe2Sb2Te5

(2009) M. Krbal et al.   PHYSICAL REVIEW LETTERS

Unravelling the Mechanism of Pressure Induced Amorphization of Phase Change Materials

(2009) S. Caravati et al.   PHYSICAL REVIEW LETTERS

Nature of Atomic Bonding and Atomic Structure in the Phase-ChangeGe2Sb2Te5Glass

(2009) M. Xu et al.   PHYSICAL REVIEW LETTERS

Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid

(2009) B.-S. Lee et al.   SCIENCE

Medium-term thermal stability of amorphous Ge2Sb2Te5 flash-evaporated thin films with regards to change in structure and optical properties

(2009) T. Wagner et al.   THIN SOLID FILMS

Synthesis and Characteristics of a Phase-Change Magnetic Material

(2008) Wen-Dong Song et al.   ADVANCED MATERIALS

Characteristic Ordering in Liquid Phase-Change Materials

(2008) Christoph Steimer et al.   ADVANCED MATERIALS

Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

(2008) Martin Pavlišta et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Microstructural and optical analysis of superresolution phenomena due to Ge2Sb2Te5 thin films at blue light regime

(2008) Hyun Seok Lee et al.   APPLIED PHYSICS LETTERS

Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb–15at.% Ge

(2008) C. Cabral et al.   APPLIED PHYSICS LETTERS

Temperature independence of pressure-induced amorphization of the phase-change memory alloy Ge2Sb2Te5

(2008) M. Krbal et al.   APPLIED PHYSICS LETTERS

Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications

(2008) Adulfas Abrutis et al.   CHEMISTRY OF MATERIALS

Threshold switching and phase transition numerical models for phase change memory simulations

(2008) A. Redaelli et al.   JOURNAL OF APPLIED PHYSICS

Structural and electrical properties of Ge1Sb2Te4 face centered cubic phase

(2008) E. Prokhorov et al.   JOURNAL OF APPLIED PHYSICS

Chemical state and atomic structure of Ge[sub 2]Sb[sub 2]Te[sub 5] system for nonvolatile phase-change random access memory

(2008) Min-Cherl Jung et al.   JOURNAL OF APPLIED PHYSICS

Optical properties and phase change transition in Ge2Sb2Te5 flash evaporated thin films studied by temperature dependent spectroscopic ellipsometry

(2008) J. Orava et al.   JOURNAL OF APPLIED PHYSICS

Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals

(2008) T. Matsunaga et al.   JOURNAL OF APPLIED PHYSICS

Lucky-drift model for impact ionization in amorphous semiconductors

(2008) K. Jandieri et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Density functional study of amorphous, liquid and crystalline Ge2Sb2Te5: homopolar bonds and/or AB alternation?

(2008) J Akola et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Chemical vapor deposition of chalcogenide materials for phase-change memories

(2008) A. Abrutis et al.   MICROELECTRONIC ENGINEERING

Void Formation Induced Electrical Switching in Phase-Change Nanowires

(2008) Stefan Meister et al.   NANO LETTERS

Size-Dependent Surface-Induced Heterogeneous Nucleation Driven Phase-Change in Ge2Sb2Te5Nanowires

(2008) Se-Ho Lee et al.   NANO LETTERS

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS

Resonant bonding in crystalline phase-change materials

(2008) Kostiantyn Shportko et al.   NATURE MATERIALS

A map for phase-change materials

(2008) Dominic Lencer et al.   NATURE MATERIALS

Insights into the structure of the stable and metastable(GeTe)m(Sb2Te3)ncompounds

(2008) Juarez L. F. Da Silva et al.   PHYSICAL REVIEW B

Local order in amorphousGe2Sb2Te5andGeSb2Te4

(2008) P. Jóvári et al.   PHYSICAL REVIEW B

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B

Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition

(2008) J. Akola et al.   PHYSICAL REVIEW LETTERS

Electrodeposition of SbTe Phase-Change Alloys

(2007) Q. Huang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Characterization of Ge[sub 1−x]Te[sub x] Chalcogenide Thin Films Deposited by MOCVD for Phase Change Memory Applications

(2007) Ran-Young Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY