Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 11, Pages 1293-1295Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2066256
Keywords
Cross bridge Kelvin resistor (CBKR); doped Sb2Te; Ge2Sb2Te5; phase change materials (PCMs); specific contact resistance (rho c)
Categories
Funding
- Materials Innovation Institute M2i [MC3.07298]
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For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the specific contact resistance (rho c) of doped Sb2Te and Ge2Sb2Te5 to TiW metal electrodes. These data are reported for both the amorphous and the crystalline states of these PCMs. The temperature and voltage dependences of rho c are also studied. A detailed understanding of these contacts is essential for the scaling, design, device modeling, and optimization of PCRAM cells.
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