Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4921226
Keywords
-
Categories
Funding
- Institute for Basic Science (IBS), Korea [IBS-R014-G1]
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R014-D1-2015-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Nanowire (NW) structures offer a model system for investigating material and scaling properties of phase change random access memory (PCRAM) at the nanometer scale. Here, we investigate the relationship between nanowire device contact resistance and reset current (I-reset) for varying diameters of NWs. Because the reset switching current directly affects possible device density of PCRAM NWs, it is considered one of the most important parameters for PCRAM. We found that the reset switching current, I-reset, was inversely proportional to the contact resistance of PCRAM NW devices decreasing as NW diameter was reduced from 250 nm to 20 nm. Our observations suggest that the reduction of power consumption of PCRAM in the sub-lithographic regime can be achieved by lowering the contact resistance. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available