Work function modulation of bilayer MoS2 nanoflake by backgate electric field effect
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Work function modulation of bilayer MoS2 nanoflake by backgate electric field effect
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 3, Pages 033122
Publisher
AIP Publishing
Online
2013-07-20
DOI
10.1063/1.4816076
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The effect of degree of reduction on the electrical properties of functionalized graphene sheets
- (2013) Christian Punckt et al. APPLIED PHYSICS LETTERS
- Phototransistors: High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared (Adv. Mater. 43/2012)
- (2012) Woong Choi et al. ADVANCED MATERIALS
- Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling
- (2012) Andres Castellanos-Gomez et al. ADVANCED MATERIALS
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm
- (2012) Mariyappan Shanmugam et al. APPLIED PHYSICS LETTERS
- Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation
- (2012) Qihang Liu et al. Journal of Physical Chemistry C
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- (2012) Hee Sung Lee et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Symmetry-dependent phonon renormalization in monolayer MoS2transistor
- (2012) Biswanath Chakraborty et al. PHYSICAL REVIEW B
- Designing Electrical Contacts toMoS2Monolayers: A Computational Study
- (2012) Igor Popov et al. PHYSICAL REVIEW LETTERS
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation
- (2011) Kangho Lee et al. ADVANCED MATERIALS
- Local Voltage Drop in a Single Functionalized Graphene Sheet Characterized by Kelvin Probe Force Microscopy
- (2011) Liang Yan et al. NANO LETTERS
- Electrical contacts to one- and two-dimensional nanomaterials
- (2011) François Léonard et al. Nature Nanotechnology
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Tunable band gaps in bilayer transition-metal dichalcogenides
- (2011) Ashwin Ramasubramaniam et al. PHYSICAL REVIEW B
- Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
- (2011) Hai Li et al. Small
- Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
- (2010) Changgu Lee et al. ACS Nano
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Tuning the Graphene Work Function by Electric Field Effect
- (2009) Young-Jun Yu et al. NANO LETTERS
- The influence of surface topography on Kelvin probe force microscopy
- (2009) S Sadewasser et al. NANOTECHNOLOGY
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started