Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

Title
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 25, Issue 15, Pages 155201
Publisher
IOP Publishing
Online
2014-03-19
DOI
10.1088/0957-4484/25/15/155201

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation