Article
Optics
Muhammad Zeewaqar Manzoor, Joshua Zide, Zahoor Ahmad, Hassan M. Khan, Saeed Ahmad Buzdar, Yuejing Wang, Hafeez Ullah, Zahida Batool
Summary: This study reports the electronic band structure of dilute GaAsBi-GaAs quantum wells experimentally and theoretically. The innovative GaAsBi quantum wells were analyzed for their optical functions and critical point transition energies, providing important parameters for the design of optoelectronic devices using these alloys.
Article
Engineering, Electrical & Electronic
Sho Hasegawa, Noriyuki Hasuike, Kazutaka Kanegae, Hiroyuki Nishinaka, Masahiro Yoshimoto
Summary: In this paper, the behavior of photoexcited plasma in GaAs1-xBix/GaAs (1.7 < x < 8.6%) heterostructures grown by molecular beam epitaxy was investigated using Raman spectroscopy. The results showed the strong LO phonon-plasmon coupled mode (LOPC), indicating good carrier mobility in the GaAsBi/GaAs heterostructure. The carrier density increased with increasing Bi content, while the optical mobility decreased with increasing Bi content, possibly due to increased defect density at lower growth temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Physics, Condensed Matter
M. Gunes, O. Donmez, C. Gumus, A. Erol, H. Alghamdi, S. Alhassan, A. Alhassni, S. Alotaibi, M. Schmidbauer, H. V. A. Galeti, M. Henini
Summary: The study reports band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition. By determining the spatial Bi profile and a certain amount of Bi composition in the barrier layer, models including strain effects were used to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence measurements were performed at a low temperature, showing different optical transition types under low and high intensity excitations.
PHYSICA B-CONDENSED MATTER
(2021)
Article
Materials Science, Multidisciplinary
Wan Khai Loke, Kian Hua Tan, Satrio Wicaksono, Soon Fatt Yoon
Summary: We investigated the effect of VSb/IIIIn flux ratio and growth temperature on the Bi content of InSbBi material grown on an InSb substrate using molecular beam epitaxy. Results showed that 98.5% of the Bi atoms were incorporated into the material in substitutional sites. We demonstrated that a kinetic model of the growth can accurately predict the Bi content by considering the extremely low desorption/hopping probability of Sb on the InSb surface due to its low growth temperature and weaker In-Bi bond. The model suggests an activation energy for Sb to displace Bi of 1.27 eV and a Bi desorption energy barrier on the InSb surface of 0.29 eV.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Ali S. Mougharbel, Sihana Ahmedi, Saurav Bhattacharya, Ananthu Rajan, Ulrich Kortz
Summary: The synthesis of four organometallic RhCp*- and IrCp*-containing heteropoly-20-tungstates was achieved through a reaction in aqueous solution at specific conditions. The structural characterization of the compounds was conducted using various techniques, revealing specific couplings in the Rh derivatives 1 and 3.
Article
Engineering, Environmental
Tanna Yu, Yukun Shen, Huibin Zhang, Shenghang Xu, Huazhen Cao, Guoqu Zheng
Summary: A new submicro-sized amorphous antimonic acid (A-SbA) with ultrahigh solubilities in strong acid was synthesized and evaluated for its environmentally friendly application in removing problematic impurity bismuth (Bi).
CHEMICAL ENGINEERING JOURNAL
(2021)
Article
Engineering, Environmental
N. Benabdallah, D. Luo, M. Hadj Youcef, J. Lopez, M. Fernandez de Labastida, A. M. Sastre, C. A. Valderrama, J. L. Cortina
Summary: Due to the lack of high-purity copper ores, the copper industry has turned to exploit low-impurity ores containing As, Sb, and Bi, which can affect the quality of the final product. This study aims to develop an environmentally friendly and circular approach by selectively separating and recovering Sb and Bi from HCl stream polluted with As.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Chemistry, Analytical
Chandramauly Sharma, Kuldeep Sharma, Yadvendra Agrawal
Summary: A new method utilizing synthetic p-carboxycalix[6]benzo crown hydroxamic acid (PCCBCHA) for liquid-liquid extraction, speciation, sequential separation, and ICP-MS trace detection of As, Sb, and Bi is described. This method shows high sensitivity and accuracy, and can be used to determine As, Sb, and Bi in a wide variety of alloys, water, environmental, and human samples.
INTERNATIONAL JOURNAL OF ENVIRONMENTAL ANALYTICAL CHEMISTRY
(2023)
Article
Chemistry, Multidisciplinary
Moamen S. Refat, Ali Sayqal, Meshari M. Aljohani, Fawaz Saad, Amerah M. Al-Solimy, Abrar A. Bayazeed, Hana M. Abumelha, Reem Shah, Nashwa El-Metwaly
Summary: A series of complexes were prepared from p-block elements and indole-3-acetic acid, categorized as a plant hormone from the auxin class. These complexes were characterized analytically, spectrally, and theoretically, showing potential advantages over the original ligand. Additionally, drug-likeness outcomes suggested potential bioactive behavior of some complexes within living cells, particularly Sn(II) and Pb(II) complexes.
Article
Chemistry, Multidisciplinary
Bumhee Lim, Takehiro Kato, Celine Besnard, Amalia I. Poblador Bahamonde, Naomi Sakai, Stefan Matile
Summary: This study expands the dynamic covalent chalcogen exchange cascades by inserting pnictogen relays and identifies privileged scaffolds for inhibiting cellular entry and viral infection.
Article
Engineering, Electrical & Electronic
Matthew S. Wong, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Summary: This review paper summarizes the recent progress in III-nitride tunnel junction (TJ) contacts for optoelectronic devices. Due to the rapid developments of various III-nitride based optoelectronic devices, TJs are of great interest for achieving higher device performance. The paper briefly explains the working principles and advantages of TJs in optoelectronic devices, and then discusses the significant advancements in III-nitride TJs realized by MOCVD and MBE, as well as their device performances. Lastly, it addresses the critical challenges for employing III-nitride TJs in wide bandgap UV light emitters for future investigations.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Zhang Tianning, Zhang Kenan, Chen Xiren, Wang Shuxia, Zhang Rongjun, Shao Jun, Chen Xin, Dai Ning
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
(2018)
Article
Physics, Condensed Matter
Xiren Chen, Huan Zhao, Xiaoyan Wu, Lijuan Wang, Liangqing Zhu, Yuxin Song, Shumin Wang, Jun Shao
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2019)
Article
Physics, Applied
Bing Yan, Xiren Chen, Liangqing Zhu, Wenwu Pan, Lijuan Wang, Li Yue, Xiaolei Zhang, Li Han, Feng Liu, Shumin Wang, Jun Shao
APPLIED PHYSICS LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Jian Huang, Baile Chen, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, Jun Shao
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2019)
Article
Instruments & Instrumentation
Xiren Chen, Liangqing Zhu, Jun Shao
REVIEW OF SCIENTIFIC INSTRUMENTS
(2019)
Article
Materials Science, Multidisciplinary
Weiwei Yu, Yue Lu, Xiren Chen, Hao Xu, Jun Shoo, Xin Chen, Yan Sun, Jiaming Hao, Ning Dai
ADVANCED OPTICAL MATERIALS
(2019)
Article
Physics, Condensed Matter
Tiantian Huang, Shuxia Wang, Wei Wei, Yan Yang, Wanli Yang, Menghui Yuan, Rui Zhang, Tianning Zhang, Xiren Chen, Yan Sun, Xiaohao Zhou, Jun Shao, Xin Chen, Ning Dai
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2020)
Article
Physics, Applied
Xiren Chen, Zhicheng Xu, Yi Zhou, Liangqing Zhu, Jianxin Chen, Jun Shao
APPLIED PHYSICS LETTERS
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Jian Huang, Baile Chen, Zhuo Deng, Yi Gu, Yingjie Ma, Jian Zhang, Xiren Chen, Jun Shao
2019 IEEE PHOTONICS CONFERENCE (IPC)
(2019)
