The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy

Growth and properties of GaSbBi alloys

(2013) M. K. Rajpalke et al.   APPLIED PHYSICS LETTERS

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 

(2013) J. Kopaczek et al.   APPLIED PHYSICS LETTERS

Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

(2013) D P Samajdar et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy

(2012) S.C. Das et al.   INFRARED PHYSICS & TECHNOLOGY

Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

(2011) S.K. Das et al.   INFRARED PHYSICS & TECHNOLOGY

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

(2011) M. Masnadi-Shirazi et al.   JOURNAL OF CRYSTAL GROWTH

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix

(2011) R. N. Kini et al.   PHYSICAL REVIEW B

Electron Hall mobility in GaAsBi

(2009) R. N. Kini et al.   JOURNAL OF APPLIED PHYSICS

Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

(2008) P. A. Postigo et al.   JOURNAL OF APPLIED PHYSICS

Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

(2008) I. Moussa et al.   THIN SOLID FILMS