Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

(2011) Muhammad Usman et al.   JOURNAL OF APPLIED PHYSICS

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

(2011) Muhammad Usman et al.   NANOTECHNOLOGY

Compositional dependence of the exciton reduced mass inGaAs1−xBix(x=0–10%)

(2010) G. Pettinari et al.   PHYSICAL REVIEW B

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

(2010) Hui-Xiong Deng et al.   PHYSICAL REVIEW B

Valley degeneracies in (111) silicon quantum wells

(2009) Neerav Kharche et al.   APPLIED PHYSICS LETTERS

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

(2009) M. Usman et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Trends in the electronic structure of dilute nitride alloys

(2009) E P O'Reilly et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

(2008) G. Pettinari et al.   APPLIED PHYSICS LETTERS

Molecular-beam-epitaxy grown GaBiAs for terahertz optoelectronic applications

(2008) V. Pačebutas et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Evolution of N defect states and optical transitions in ordered and disordered GaP1−xNxalloys

(2008) C Harris et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

(2008) G. P. Lansbergen et al.   Nature Physics

Spatial correlation between Bi atoms in diluteGaAs1−xBix: From random distribution to Bi pairing and clustering

(2008) G. Ciatto et al.   PHYSICAL REVIEW B