Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states
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Title
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 250, Issue 4, Pages 779-786
Publisher
Wiley
Online
2013-02-11
DOI
10.1002/pssb.201200463
References
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Related references
Note: Only part of the references are listed.- Bi-induced p-type conductivity in nominally undoped Ga(AsBi)
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- Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique
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- Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy
- (2011) G. Pettinari et al. PHYSICAL REVIEW B
- Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix
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- Temperature dependence of hole mobility in GaAs1−xBix alloys
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- Composition dependence of photoluminescence of GaAs1−xBix alloys
- (2009) Xianfeng Lu et al. APPLIED PHYSICS LETTERS
- Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
- (2009) R. Kudrawiec et al. JOURNAL OF APPLIED PHYSICS
- Carrier mass measurements in degenerate indium nitride
- (2009) G. Pettinari et al. PHYSICAL REVIEW B
- Electron coherence length and mobility in highly mismatched III-N-V alloys
- (2008) A. Patanè et al. APPLIED PHYSICS LETTERS
- Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
- (2008) G. Pettinari et al. APPLIED PHYSICS LETTERS
- Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
- (2008) T. Tiedje et al. International Journal of Nanotechnology
- light emitting diodes
- (2008) R.B. Lewis et al. JOURNAL OF CRYSTAL GROWTH
- Bi isoelectronic impurities in GaAs
- (2008) S. Francoeur et al. PHYSICAL REVIEW B
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