Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences
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Title
Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences
Authors
Keywords
oxide semiconductor, Bi-layer, Thin-film transistor, Atomic layer deposition
Journal
Electronic Materials Letters
Volume 11, Issue 2, Pages 198-205
Publisher
Springer Nature
Online
2015-04-10
DOI
10.1007/s13391-014-4305-1
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