Modulating the extent of fast and slow boron-oxygen related degradation in Czochralski silicon by thermal annealing: Evidence of a single defect

Degradation of Crystalline Silicon Due to Boron–Oxygen Defects

(2017) Tim Niewelt et al.   IEEE Journal of Photovoltaics

Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon

(2016) T. Niewelt et al.   JOURNAL OF APPLIED PHYSICS

Permanent deactivation of boron-oxygen recombination centres in silicon

(2016) Vladimir Voronkov et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect

(2016) Brett Hallam et al.   Physica Status Solidi-Rapid Research Letters

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

(2015) Tim Niewelt et al.   Physica Status Solidi-Rapid Research Letters

Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells

(2014) Soo Min Kim et al.   APPLIED PHYSICS LETTERS

Precipitation of iron in multicrystalline silicon during annealing

(2014) A. Y. Liu et al.   JOURNAL OF APPLIED PHYSICS

Direct detection of carrier traps in Si solar cells after light-induced degradation

(2014) Teimuraz Mchedlidze et al.   Physica Status Solidi-Rapid Research Letters

Boron-oxygen defect imaging in p-type Czochralski silicon

(2013) S. Y. Lim et al.   APPLIED PHYSICS LETTERS

On the mechanism of recombination at oxide precipitates in silicon

(2013) J. D. Murphy et al.   APPLIED PHYSICS LETTERS

Light-induced degradation in indium-doped silicon

(2013) Christian Möller et al.   Physica Status Solidi-Rapid Research Letters

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

(2013) Maxime Forster et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

(2013) Tine Uberg Naerland et al.   IEEE Journal of Photovoltaics

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

(2012) M. Forster et al.   APPLIED PHYSICS LETTERS

Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron–oxygen complexes via a hole-emitting process

(2011) Bianca Lim et al.   APPLIED PHYSICS LETTERS

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

(2011) F. E. Rougieux et al.   JOURNAL OF APPLIED PHYSICS

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

(2011) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

(2010) T. Schutz-Kuchly et al.   APPLIED PHYSICS LETTERS

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS

Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

(2010) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Modelling lifetime degradation in boron-doped Czochralski silicon

(2010) Vladimir V. Voronkov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature

(2008) Bianca Lim et al.   Physica Status Solidi-Rapid Research Letters

Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon

(2007) A. Herguth et al.   PROGRESS IN PHOTOVOLTAICS