Fast in-situ photoluminescence analysis for a recombination parameterization of the fast BO defect component in silicon

Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect

(2016) Brett Hallam et al.   Physica Status Solidi-Rapid Research Letters

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

(2015) J. Schön et al.   JOURNAL OF APPLIED PHYSICS

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

(2015) Tim Niewelt et al.   Physica Status Solidi-Rapid Research Letters

Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

(2013) Tine Uberg Naerland et al.   IEEE Journal of Photovoltaics

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

(2012) M. Forster et al.   APPLIED PHYSICS LETTERS

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

(2012) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride

(2011) Johannes Seiffe et al.   JOURNAL OF APPLIED PHYSICS

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

(2011) F. E. Rougieux et al.   JOURNAL OF APPLIED PHYSICS

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

(2011) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

(2011) F. E. Rougieux et al.   IEEE Journal of Photovoltaics

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

(2010) J. A. Giesecke et al.   APPLIED PHYSICS LETTERS

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

(2010) T. Schutz-Kuchly et al.   APPLIED PHYSICS LETTERS

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS

Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

(2009) Bianca Lim et al.   APPLIED PHYSICS LETTERS

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

(2009) D. Macdonald et al.   JOURNAL OF APPLIED PHYSICS