On the mechanism of recombination at oxide precipitates in silicon

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates

(2012) K. Bothe et al.   APPLIED PHYSICS LETTERS

Spin-dependent recombination in Czochralski silicon containing oxide precipitates

(2012) V. Lang et al.   JOURNAL OF APPLIED PHYSICS

The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C

(2012) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

(2012) Michio Tajima et al.   JOURNAL OF APPLIED PHYSICS

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

(2012) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

(2011) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

Oxygen Precipitation Related Stress-Modified Crack Propagation in High Growth Rate Czochralski Silicon Wafers

(2011) P. K. Kulshreshtha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging

(2011) Jonas Haunschild et al.   Physica Status Solidi-Rapid Research Letters

Contamination of silicon by iron at temperatures below 800 °C

(2011) J. D. Murphy et al.   Physica Status Solidi-Rapid Research Letters

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

(2009) K. Bothe et al.   JOURNAL OF APPLIED PHYSICS