Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature

Published 2008 View Full Article

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Title
Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
Authors
Keywords
-
Journal
Physica Status Solidi-Rapid Research Letters
Volume 2, Issue 3, Pages 93-95
Publisher
Wiley
Online
2008-02-15
DOI
10.1002/pssr.200802009

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