Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

A New Method for the Determination of the Dopant-Related Base Resistivity Despite the Presence of Thermal Donors

(2015) Juliane Broisch et al.   IEEE Journal of Photovoltaics

Towards a unified low-field model for carrier mobilities in crystalline silicon

(2014) Florian Schindler et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

(2013) Maxime Forster et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

(2013) Tine Uberg Naerland et al.   IEEE Journal of Photovoltaics

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

(2012) M. Forster et al.   APPLIED PHYSICS LETTERS

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

(2012) J. D. Murphy et al.   JOURNAL OF APPLIED PHYSICS

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

(2011) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

(2011) F. E. Rougieux et al.   IEEE Journal of Photovoltaics

Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence

(2010) J. A. Giesecke et al.   APPLIED PHYSICS LETTERS

Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon

(2010) T. Schutz-Kuchly et al.   APPLIED PHYSICS LETTERS

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS