Fast and slow lifetime degradation in boron-doped Czochralski silicon described by a single defect

Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

(2016) Brett Hallam et al.   JOURNAL OF APPLIED PHYSICS

Characterization and modelling of the boron-oxygen defect activation in compensated n-type silicon

(2015) J. Schön et al.   JOURNAL OF APPLIED PHYSICS

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

(2015) Tim Niewelt et al.   Physica Status Solidi-Rapid Research Letters

Direct detection of carrier traps in Si solar cells after light-induced degradation

(2014) Teimuraz Mchedlidze et al.   Physica Status Solidi-Rapid Research Letters

Light-induced degradation in indium-doped silicon

(2013) Christian Möller et al.   Physica Status Solidi-Rapid Research Letters

Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

(2013) Tine Uberg Naerland et al.   IEEE Journal of Photovoltaics

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

(2012) M. Forster et al.   APPLIED PHYSICS LETTERS

Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening

(2012) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

(2011) L. I. Murin et al.   APPLIED PHYSICS LETTERS

Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

(2011) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS