The improved resistive switching properties of TaOx-based RRAM devices by using WNx as bottom electrode

Published 2012 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
The improved resistive switching properties of TaOx-based RRAM devices by using WNx as bottom electrode
Authors
Keywords
-
Journal
PHYSICA B-CONDENSED MATTER
Volume 410, Issue -, Pages 85-89
Publisher
Elsevier BV
Online
2012-11-01
DOI
10.1016/j.physb.2012.10.020

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.