Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

Title
Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 2, Issue 4, Pages 1500370
Publisher
Wiley
Online
2016-01-14
DOI
10.1002/aelm.201500370

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