Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 2, Issue 4, Pages 1500370
Publisher
Wiley
Online
2016-01-14
DOI
10.1002/aelm.201500370
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
- (2015) Stephan Menzel et al. Nanoscale
- Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory
- (2015) Shengjun Qin et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Conducting-Interlayer SiOx Memory Devices on Rigid and Flexible Substrates
- (2014) Gunuk Wang et al. ACS Nano
- Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
- (2014) Byoung Kuk You et al. ACS Nano
- Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
- (2014) Sungho Kim et al. ACS Nano
- Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
- (2014) Jung Ho Yoon et al. ADVANCED FUNCTIONAL MATERIALS
- Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches
- (2014) IEEE TRANSACTIONS ON ELECTRON DEVICES
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
- (2014) Umberto Celano et al. NANO LETTERS
- Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots
- (2013) Jung Ho Yoon et al. ADVANCED MATERIALS
- Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
- (2013) S. Balatti et al. ADVANCED MATERIALS
- Resistive switching mechanism in silicon highly rich SiOx (x
- (2013) Yuefei Wang et al. APPLIED PHYSICS LETTERS
- Switching kinetics of electrochemical metallization memory cells
- (2013) Stephan Menzel et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- All-Organic Photopatterned One Diode-One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications
- (2012) Tae-Wook Kim et al. ADVANCED MATERIALS
- Functionalized shell-isolated nanoparticle-enhanced Raman spectroscopy for selective detection of trinitrotoluene
- (2012) Kai Qian et al. ANALYST
- Study of polarity effect in SiOx-based resistive switching memory
- (2012) Yao-Feng Chang et al. APPLIED PHYSICS LETTERS
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching
- (2012) Benlin Hu et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Organic resistive nonvolatile memory materials
- (2012) Takhee Lee et al. MRS BULLETIN
- Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes
- (2012) Sun Kak Hwang et al. NANO LETTERS
- Flexible molecular-scale electronic devices
- (2012) Sungjun Park et al. Nature Nanotechnology
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
- (2012) Jun Yao et al. Nature Communications
- Electrical memory devices based on inorganic/organic nanocomposites
- (2012) Tae Whan Kim et al. NPG Asia Materials
- In situ imaging of the conducting filament in a silicon oxide resistive switch
- (2012) Jun Yao et al. Scientific Reports
- In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
- (2011) Sang-Jun Choi et al. ADVANCED MATERIALS
- Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
- (2011) Haowei Zhang et al. APPLIED PHYSICS LETTERS
- A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation
- (2011) Feng Pan et al. IEEE ELECTRON DEVICE LETTERS
- Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode
- (2011) Wentai Lian et al. IEEE ELECTRON DEVICE LETTERS
- Metal oxide resistive memory switching mechanism based on conductive filament properties
- (2011) G. Bersuker et al. JOURNAL OF APPLIED PHYSICS
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Memristors With Flexible Electronic Applications
- (2011) Nadine Gergel-Hackett et al. PROCEEDINGS OF THE IEEE
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Resistive Switches and Memories from Silicon Oxide
- (2010) Jun Yao et al. NANO LETTERS
- Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
- (2010) Kazuki Nagashima et al. NANO LETTERS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
- (2009) H.Y. Lee et al. IEEE ELECTRON DEVICE LETTERS
- High-Density Crossbar Arrays Based on a Si Memristive System
- (2009) Sung Hyun Jo et al. NANO LETTERS
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
- (2008) Sung Hyun Jo et al. NANO LETTERS
- Programmable Resistance Switching in Nanoscale Two-Terminal Devices
- (2008) Sung Hyun Jo et al. NANO LETTERS
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search