Switching kinetics of electrochemical metallization memory cells

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells

(2013) Deok-Yong Cho et al.   Nanoscale

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

(2013) Deok-Yong Cho et al.   Scientific Reports

Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

(2012) Deok-Yong Cho et al.   ADVANCED MATERIALS

Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells

(2012) John R. Jameson et al.   APPLIED PHYSICS LETTERS

Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells

(2012) John R. Jameson et al.   IEEE ELECTRON DEVICE LETTERS

Observing “quantized” conductance steps in silver sulfide: Two parallel resistive switching mechanisms

(2012) Jelmer J. T. Wagenaar et al.   JOURNAL OF APPLIED PHYSICS

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

(2012) I. Valov et al.   JOURNAL OF SOLID STATE ELECTROCHEMISTRY

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

(2012) Stefan Tappertzhofen et al.   Nanoscale

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

(2012) E Linn et al.   NANOTECHNOLOGY

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch

(2012) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Comment on “Exponential ionic drift: fast switching and low volatility of thin-film memristors” by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94: 515–519

(2011) P. Meuffels et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

One-dimensional model of the programming kinetics of conductive-bridge memory cells

(2011) John R. Jameson et al.   APPLIED PHYSICS LETTERS

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

(2011) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Switching kinetics of a Cu2S-based gap-type atomic switch

(2011) Alpana Nayak et al.   NANOTECHNOLOGY

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

(2011) Takeo Ohno et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Current Status of Nonvolatile Semiconductor Memory Technology

(2010) Yoshihisa Fujisaki   JAPANESE JOURNAL OF APPLIED PHYSICS

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

(2010) Alpana Nayak et al.   Journal of Physical Chemistry Letters

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING

Towards a quantitative description of solid electrolyte conductance switches

(2010) Monica Morales-Masis et al.   Nanoscale

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

(2009) Lin Yang et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

(2009) Christina Schindler et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS