Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

Plasma enhanced multistate storage capability of single ZnO nanowire based memory

(2015) Yunfeng Lai et al.   APPLIED PHYSICS LETTERS

Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

(2015) Xiaorong Chen et al.   APPLIED SURFACE SCIENCE

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

(2015) Lin Liang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

(2015) Umberto Celano et al.   NANO LETTERS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

(2014) Min Qian et al.   ADVANCED MATERIALS

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

(2014) Tian-Jian Chu et al.   APPLIED PHYSICS LETTERS

Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure

(2014) X. B. Yan et al.   APPLIED PHYSICS LETTERS

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application

(2014) Adrian Chasin et al.   IEEE ELECTRON DEVICE LETTERS

Defects and Resistive Switching of Zinc Oxide Nanorods with Copper Addition Grown by Hydrothermal Method

(2014) Yunfeng Lai et al.   JOURNAL OF ELECTRONIC MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Insertion of a Si layer to reduce operation current for resistive random access memory applications

(2013) Yu-Ting Chen et al.   APPLIED PHYSICS LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Bipolar one diode–one resistor integration for high-density resistive memory applications

(2013) Yingtao Li et al.   Nanoscale

Resistive Switching in Single Epitaxial ZnO Nanoislands

(2012) Jing Qi et al.   ACS Nano

Improving the electrical performance of resistive switching memory using doping technology

(2012) Yan Wang et al.   CHINESE SCIENCE BULLETIN

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

All Solution-Processed, Fully Transparent Resistive Memory Devices

(2011) Areum Kim et al.   ACS Applied Materials & Interfaces

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Single-ZnO-Nanowire Memory

(2011) Yen-De Chiang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

(2011) Xun Cao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Influence of oxygen vacancies on Schottky contacts to ZnO

(2008) M. W. Allen et al.   APPLIED PHYSICS LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS