All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Title
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 25, Pages 255104
Publisher
IOP Publishing
Online
2011-06-10
DOI
10.1088/0022-3727/44/25/255104

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started