Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

Published 2012 View Full Article

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Title
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 12, Pages 125008
Publisher
IOP Publishing
Online
2012-10-25
DOI
10.1088/0268-1242/27/12/125008

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