Crossbar Nanoscale HfO2-Based Electronic Synapses

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

(2015) Yu. Matveyev et al.   JOURNAL OF APPLIED PHYSICS

Conductive filament structure in HfO2 resistive switching memory devices

(2015) S. Privitera et al.   SOLID-STATE ELECTRONICS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

(2014) Yi Li et al.   Scientific Reports

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

(2013) Shimeng Yu et al.   ADVANCED MATERIALS

Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor

(2013) S. G. Hu et al.   APPLIED PHYSICS LETTERS

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

STDP and STDP variations with memristors for spiking neuromorphic learning systems

(2013) T. Serrano-Gotarredona et al.   Frontiers in Neuroscience

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

(2012) F. De Stefano et al.   APPLIED PHYSICS LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A study of the leakage current in TiN/HfO2/TiN capacitors

(2011) S. Cimino et al.   MICROELECTRONIC ENGINEERING

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Time-dependent electroforming in NiO resistive switching devices

(2009) Gyoung-Ho Buh et al.   APPLIED PHYSICS LETTERS

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

(2009) Qiangfei Xia et al.   NANO LETTERS

A hybrid nanomemristor/transistor logic circuit capable of self-programming

(2009) Julien Borghetti et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA