High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
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Title
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 4, Issue 40, Pages 9438-9444
Publisher
Royal Society of Chemistry (RSC)
Online
2016-09-07
DOI
10.1039/c6tc02137a
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- (2014) I-Chung Chiu et al. IEEE ELECTRON DEVICE LETTERS
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- (2014) Myeonghun U et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer
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- (2013) Chan-Yong Jeong et al. APPLIED PHYSICS LETTERS
- p-channel thin-film transistors based on spray-coated Cu2O films
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- Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
- (2012) Z. Q. Yao et al. APPLIED PHYSICS LETTERS
- SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator
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- Solution-processed oxide semiconductor SnO in p-channel thin-film transistors
- (2012) Koshi Okamura et al. JOURNAL OF MATERIALS CHEMISTRY
- The structural, optical and electrical properties of Y-doped SnO thin films and their p-type TFT application
- (2012) Ling Yan Liang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates
- (2012) L. De Los Santos Valladares et al. THIN SOLID FILMS
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