High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Title
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
Authors
Keywords
-
Journal
Journal of Materials Chemistry C
Volume 4, Issue 40, Pages 9438-9444
Publisher
Royal Society of Chemistry (RSC)
Online
2016-09-07
DOI
10.1039/c6tc02137a

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