High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
出版年份 2016 全文链接
标题
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 4, Issue 40, Pages 9438-9444
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-09-07
DOI
10.1039/c6tc02137a
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