Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation

Oxygen migration at Pt/HfO2/Pt interface under bias operation

(2010) T. Nagata et al.   APPLIED PHYSICS LETTERS

Transition-metal-oxide-based resistance-change memories

(2010) S. F. Karg et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor

(2009) Takashi Tsuchiya et al.   Applied Physics Express

Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

(2009) Masamitsu Haemori et al.   Applied Physics Express

Resistive non-volatile memory devices (Invited Paper)

(2009) Rainer Waser   MICROELECTRONIC ENGINEERING

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Local chemical state change in Co–O resistance random access memory

(2008) Hisashi Shima et al.   Physica Status Solidi-Rapid Research Letters

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY