A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
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Title
A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
Authors
Keywords
-
Journal
Scientific Reports
Volume 6, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-04-22
DOI
10.1038/srep24448
References
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Related references
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