Epitaxial growth of GaN films on unconventional oxide substrates

Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (111) substrates

(2014) Wenliang Wang et al.   APPLIED SURFACE SCIENCE

Epitaxial growth mechanism of pulsed laser deposited AlN films on Si (111) substrates

(2014) Hui Yang et al.   CRYSTENGCOMM

Epitaxial growth of high quality AlN films on metallic aluminum substrates

(2014) Wenliang Wang et al.   CRYSTENGCOMM

Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates

(2014) Shizhong Zhou et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   JOURNAL OF MATERIALS SCIENCE

Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates

(2014) Wenliang Wang et al.   MATERIALS LETTERS

Effect of nitrogen pressure on the properties of AlN films grown on nitrided Al(111) substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   MATERIALS LETTERS

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   RSC Advances

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

(2014) Wenliang Wang et al.   Journal of Materials Chemistry C

Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6substrates

(2014) Wenliang Wang et al.   Materials Research Express

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO2-Coated ZnO Nanorod Arrays

(2013) Chu-Young Cho et al.   Applied Physics Express

Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

(2013) Yuji Zhao et al.   Applied Physics Express

Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

(2013) Wenliang Wang et al.   CRYSTENGCOMM

Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

(2013) Hui Yang et al.   CRYSTENGCOMM

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

(2013) Hui Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

(2013) Wenliang Wang et al.   Journal of Materials Chemistry C

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

(2013) Weijia Yang et al.   Journal of Materials Chemistry C

Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants

(2012) Dongjin Won et al.   APPLIED PHYSICS LETTERS

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs

(2012) Zhiting Lin et al.   CRYSTAL GROWTH & DESIGN

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

(2012) Yu-Sheng Lin et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterization of a-plane (110) GaN films on (010) LiGaO2 substrate by chemical vapor deposition

(2012) Mitch M.C. Chou et al.   JOURNAL OF CRYSTAL GROWTH

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

(2012) David A. Browne et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

(2012) Yasuyuki Kobayashi et al.   NATURE

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

(2012) Philipp Drechsel et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

(2012) L. Neumann et al.   THIN SOLID FILMS

Direct Grafting of Long-Lived Luminescent Indicator Dyes to GaN Light-Emitting Diodes for Chemical Microsensor Development

(2011) Juan López-Gejo et al.   ACS Applied Materials & Interfaces

Evaluation of the interface of thin GaN layers on c- and m-plane ZnO substrates by Rutherford backscattering

(2011) Y. Izawa et al.   APPLIED PHYSICS LETTERS

Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

(2011) C. Mauder et al.   APPLIED PHYSICS LETTERS

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2Substrates

(2011) Guoqiang Li et al.   CRYSTAL GROWTH & DESIGN

Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence

(2011) G. He et al.   JOURNAL OF APPLIED PHYSICS

Improvement of M-plane GaN thin film grown on pre-annealing β-LiGaO2 (100) substrate

(2011) Cheng-Hung Shih et al.   JOURNAL OF CRYSTAL GROWTH

Growth and strain characterization of high quality GaN crystal by HVPE

(2011) Huiyuan Geng et al.   JOURNAL OF CRYSTAL GROWTH

Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy

(2011) Kuang-Wei Liu et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) β-LiGaO2 substrate by chemical vapor deposition

(2011) Mitch M.C. Chou et al.   THIN SOLID FILMS

Characterization of M-plane GaN film grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy

(2011) Cheng-Hung Shih et al.   THIN SOLID FILMS

Striated surface morphology and crystal orientation of m-plane GaN films grown on γ-LiAlO2(100)

(2010) K. R. Wang et al.   APPLIED PHYSICS LETTERS

Interface chemistry and electronic structure of GaN/MgAl2O4 revealed by angle-resolved photoemission spectroscopy

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

(2010) C. Mauder et al.   JOURNAL OF CRYSTAL GROWTH

Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films

(2010) Guoqiang Li et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Growth and electron microscopy study of GaN/MgAl2O4 heterostructures

(2010) Guoqiang Li et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Surface and interface phonon polaritons of wurtzite GaN thin film grown on 6H-SiC substrate

(2009) S. S. Ng et al.   APPLIED PHYSICS LETTERS

A new system for synthesis of high quality nonpolar GaN thin films

(2009) Guoqiang Li et al.   CHEMICAL COMMUNICATIONS

MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

(2009) D.R. Hang et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxy ofm-plane ZnO on (112) LaAlO3substrate

(2009) Yen-Teng Ho et al.   Physica Status Solidi-Rapid Research Letters

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO2

(2008) Xie Zi-Li et al.   CHINESE PHYSICS LETTERS

Effect of the MgO substrate on the growth of GaN

(2008) R. Suzuki et al.   JOURNAL OF CRYSTAL GROWTH

Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition

(2007) Yen-Teng Ho et al.   JOURNAL OF CRYSTAL GROWTH