Journal
CRYSTENGCOMM
Volume 15, Issue 36, Pages 7171-7176Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ce40886h
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Funding
- National Science Foundation of China [51002052]
- Key Project in Science and Technology of Guangdong Province [2011A080801018]
- Strategic Special Funds for LEDs of Guangdong Province [2011A081301010, 2011A081301012]
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Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by pulsed laser deposition (PLD). By optimising the laser rastering and PLD growth conditions, the 2 inch-diameter single-crystalline AlN films exhibit excellent thickness uniformity with a root-mean-square (RMS) inhomogeneity of less than 3.6% and a very smooth surface with a RMS roughness of 1.4 nm. There is a 1.5 nm-thick interfacial layer between the as-grown AlN films and Si substrates, which is confirmed by HRTEM and a GIXR simulation, and the as-grown AlN films are almost fully relaxed with only 0.3% in-plane tensile strain. The achievement of high-quality and crack-free AlN films with a uniform thickness and abrupt interface on 2 inch Si (111) substrates is of great interest for AlN-based devices, particularly acoustic filters, where abrupt heterointerfaces with the substrates and flat surfaces of AlN films are highly desired.
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