Effect of AlN buffer thickness on GaN epilayer grown on Si(111)

Published 2011 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Effect of AlN buffer thickness on GaN epilayer grown on Si(111)
Authors
Keywords
-
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 14, Issue 2, Pages 97-100
Publisher
Elsevier BV
Online
2011-03-08
DOI
10.1016/j.mssp.2011.01.006

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.