Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (111) substrates

(2014) Wenliang Wang et al.   APPLIED SURFACE SCIENCE

Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

(2014) Yuan Tian et al.   CRYSTENGCOMM

Epitaxial growth mechanism of pulsed laser deposited AlN films on Si (111) substrates

(2014) Hui Yang et al.   CRYSTENGCOMM

Epitaxial growth of high quality AlN films on metallic aluminum substrates

(2014) Wenliang Wang et al.   CRYSTENGCOMM

Field-effect transistors based on cubic indium nitride

(2014) Masaaki Oseki et al.   Scientific Reports

Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6substrates

(2014) Wenliang Wang et al.   Materials Research Express

Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

(2013) Wenliang Wang et al.   CRYSTENGCOMM

EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate

(2013) Yongliang Shao et al.   CRYSTENGCOMM

Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

(2013) Hui Yang et al.   CRYSTENGCOMM

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

(2013) M.M. Zhong et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

(2013) Yuemei Liu et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

(2013) Hui Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Pulse splitting by modulating the thickness of buffer layer of two-layer volume holographic grating

(2013) Xiaona Yan et al.   OPTICS EXPRESS

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates

(2013) Wenliang Wang et al.   Journal of Materials Chemistry C

Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

(2012) Haodong Zhang et al.   CRYSTENGCOMM

Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD

(2012) Yue Zhao et al.   VACUUM

Improvement of crystal quality HVPE grown GaN on an H3PO4 etched template

(2011) Lei Zhang et al.   CRYSTENGCOMM

GaN-Based Thin Film Vertical Structure Light Emitting Diodes Fabricated by a Modified Laser Lift-off Process and Transferred to Cu

(2010) Yong-Jian Sun et al.   CHINESE PHYSICS LETTERS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Epitaxial growth of GaN films grown on single crystal Fe substrates

(2008) K. Okamoto et al.   APPLIED PHYSICS LETTERS

Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers

(2008) Koichiro Okamoto et al.   JOURNAL OF CRYSTAL GROWTH