Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

(2016) Un-Bin Han et al.   Scientific Reports

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

(2016) Ji-Min Song et al.   Scientific Reports

Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

(2015) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

(2015) Shuang Gao et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

(2014) Kai-De Liang et al.   ACS Applied Materials & Interfaces

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt

(2014) Dooho Choi et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Electrode-material dependent switching in TaOxmemristors

(2014) Ning Ge et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

(2014) Yuanhao Jin et al.   Nanoscale Research Letters

Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories

(2014) Stefan Tappertzhofen et al.   ChemElectroChem

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

(2013) Jie Shang et al.   ADVANCED FUNCTIONAL MATERIALS

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

Engineered fabrication of ordered arrays of Au–NiO–Au nanowires

(2013) Daniele Perego et al.   NANOTECHNOLOGY

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

(2013) Sangsu Park et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

(2013) Ilia Valov   ChemElectroChem

Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

(2012) Jaewon Jang et al.   ADVANCED MATERIALS

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Copper oxide nanowires: a review of growth

(2012) G Filipič et al.   NANOTECHNOLOGY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

(2011) Myoung-Jae Lee et al.   ACS Applied Materials & Interfaces

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Progress in non-volatile memory devices based on nanostructured materials and nanofabrication

(2011) Jang-Sik Lee   JOURNAL OF MATERIALS CHEMISTRY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

(2010) Jong Yeog Son et al.   ACS Nano

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Optimization of pulsed electrodeposition of aluminum from AlCl3-1-ethyl-3-methylimidazolium chloride ionic liquid

(2010) Jinwei Tang et al.   ELECTROCHIMICA ACTA

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switches and Memories from Silicon Oxide

(2010) Jun Yao et al.   NANO LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

(2009) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS