Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

(2015) Xu-Qiang Shen et al.   CRYSTENGCOMM

Epitaxial challenges of GaN on silicon

(2015) F. Semond   MRS BULLETIN

Sixteen years GaN on Si

(2015) Armin Dadgar   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

(2013) Dennis Christy et al.   Applied Physics Express

Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

(2013) Amalraj Frank Wilson et al.   Applied Physics Express

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

GaN on Si Technologies for Power Switching Devices

(2013) Masahiro Ishida et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

(2013) D J Wallis et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

(2012) Kai Cheng et al.   Applied Physics Express

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

(2012) S. Tripathy et al.   APPLIED PHYSICS LETTERS

Dislocation bending and tensile stress generation in GaN and AlGaN films

(2012) Srinivasan Raghavan et al.   JOURNAL OF CRYSTAL GROWTH

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

(2008) Engin Arslan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS