Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

High-quality GaN film and AlGaN/GaN HEMT grown on 4-inch Si(110) substrates by MOCVD using an ultra-thin AlN/GaN superlattice interlayer

(2014) X. Q. Shen et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy

(2013) X. Q. Shen et al.   APPLIED PHYSICS LETTERS

Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates

(2013) Xu-Qiang Shen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer

(2012) X. Q. Shen et al.   APPLIED PHYSICS LETTERS

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

(2012) Adam H. Blake et al.   JOURNAL OF APPLIED PHYSICS

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

(2011) S. Lawrence Selvaraj et al.   APPLIED PHYSICS LETTERS

Effect of n-GaN thickness on internal quantum efficiency in InxGa1-xN multiple-quantum-well light emitting diodes grown on Si (111) substrate

(2011) L. Lu et al.   JOURNAL OF APPLIED PHYSICS

Growth of GaN based structures on Si(110) by molecular beam epitaxy

(2010) Y. Cordier et al.   JOURNAL OF CRYSTAL GROWTH

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

(2010) H.P.D. Schenk et al.   JOURNAL OF CRYSTAL GROWTH

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

(2009) F. Reiher et al.   JOURNAL OF CRYSTAL GROWTH

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metal–organic vapour phase epitaxy

(2009) F Reiher et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

(2008) Benjamin Damilano et al.   Applied Physics Express

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

(2008) Kai Cheng et al.   APPLIED PHYSICS LETTERS

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

(2008) Yvon Cordier et al.   IEEE ELECTRON DEVICE LETTERS