Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence

(2013) Amalraj Frank Wilson et al.   Applied Physics Express

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer

(2012) X. Q. Shen et al.   APPLIED PHYSICS LETTERS

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

(2012) Matteo Meneghini et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

(2012) S. Tripathy et al.   APPLIED PHYSICS LETTERS

Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

(2012) Shaobo Dun et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Strong luminescence of two-dimensional electron gas in tensile-stressed AlGaN/GaN heterostructures grown on Si substrates

(2011) Ki-Won Kim et al.   APPLIED PHYSICS LETTERS

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

(2011) S. Lawrence Selvaraj et al.   APPLIED PHYSICS LETTERS

Surface characterization of AlGaN grown on Si (111) substrates

(2011) Xu Pan et al.   JOURNAL OF CRYSTAL GROWTH

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

(2010) Sefa Demirtas et al.   MICROELECTRONICS RELIABILITY

Impact of ⟨110⟩ uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

(2009) Ling Xia et al.   APPLIED PHYSICS LETTERS

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY