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Title
Epitaxial challenges of GaN on silicon
Authors
Keywords
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Journal
MRS BULLETIN
Volume 40, Issue 05, Pages 412-417
Publisher
Cambridge University Press (CUP)
Online
2015-05-08
DOI
10.1557/mrs.2015.96
References
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Related references
Note: Only part of the references are listed.- GaN transistors on Si for switching and high-frequency applications
- (2014) Tetsuzo Ueda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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- (2014) H Yacoub et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Prospects of III-nitride optoelectronics grown on Si
- (2013) D Zhu et al. REPORTS ON PROGRESS IN PHYSICS
- Gallium nitride devices for power electronic applications
- (2013) B Jayant Baliga SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
- (2012) Kai Cheng et al. Applied Physics Express
- Structure and chemistry of the Si(111)/AlN interface
- (2012) G. Radtke et al. APPLIED PHYSICS LETTERS
- Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si
- (2011) Iruthayaraj Beaula Rowena et al. IEEE ELECTRON DEVICE LETTERS
- Reliability issues of GaN based high voltage power devices
- (2011) J. Wuerfl et al. MICROELECTRONICS RELIABILITY
- Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
- (2010) G. Radtke et al. APPLIED PHYSICS LETTERS
- Silicon Substrate Removal of GaN DHFETs for Enhanced (
- (2010) Puneet Srivastava et al. IEEE ELECTRON DEVICE LETTERS
- Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate
- (2010) F. Medjdoub et al. IEEE ELECTRON DEVICE LETTERS
- Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
- (2009) Josephine Selvaraj et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
- (2009) N. Baron et al. JOURNAL OF APPLIED PHYSICS
- AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?
- (2009) A. Le Louarn et al. JOURNAL OF CRYSTAL GROWTH
- Recent advances in GaN transistors for future emerging applications
- (2009) Manabu Yanagihara et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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