Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

(2012) Kai Cheng et al.   Applied Physics Express

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

(2012) S. Tripathy et al.   APPLIED PHYSICS LETTERS

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

(2012) Susai Lawrence Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

(2012) Subramaniam Arulkumaran et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

(2011) Iruthayaraj Beaula Rowena et al.   IEEE ELECTRON DEVICE LETTERS

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

(2010) Domenica Visalli et al.   APPLIED PHYSICS LETTERS

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

(2010) Naohiro Tsurumi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

(2010) Domenica Visalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

(2009) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

(2008) Masataka Higashiwaki et al.   Applied Physics Express