Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
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Title
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
Authors
Keywords
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Journal
Nanoscale
Volume 8, Issue 29, Pages 13915-13923
Publisher
Royal Society of Chemistry (RSC)
Online
2016-01-25
DOI
10.1039/c5nr08735j
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Related references
Note: Only part of the references are listed.- Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
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- (2013) Umberto Celano et al. Nanoscale
- Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
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- Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
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- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
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