Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors

(2014) Young Jun Tak et al.   ACS Applied Materials & Interfaces

Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In–Ga–Zn–O Thin-Film Transistors Using Hydrogen Peroxide

(2014) Jeong Moo Kwon et al.   ACS Applied Materials & Interfaces

Thermally stable and high ON/OFF ratio non-volatile memory devices based on poly(triphenylamine) with pendent PCBM

(2014) Chih-Jung Chen et al.   CHEMICAL COMMUNICATIONS

Enhanced resistive switching effect upon illumination in self-assembled NiWO4nano-nests

(2014) Bai Sun et al.   CHEMICAL COMMUNICATIONS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

(2014) D. Acharyya et al.   MICROELECTRONICS RELIABILITY

The effects of Ta2O5–ZnO films as cathodic buffer layers in inverted polymer solar cells

(2014) Jo-Lin Lan et al.   Journal of Materials Chemistry A

Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices

(2014) Doo Hyun Yoon et al.   Journal of Materials Chemistry C

Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc–Tin–Oxide/Indium–Gallium–Zinc–Oxide Thin-Film Transistors Using a Solution Process

(2013) Chul Ho Kim et al.   ACS Applied Materials & Interfaces

Insertion of a Si layer to reduce operation current for resistive random access memory applications

(2013) Yu-Ting Chen et al.   APPLIED PHYSICS LETTERS

Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

(2013) Yue Bai et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

(2012) Doo Hyun Yoon et al.   JOURNAL OF MATERIALS CHEMISTRY

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture

(2012) Ming-Chi Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs

(2011) T. Das et al.   APPLIED PHYSICS LETTERS

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

(2011) Blanka Magyari-Köpe et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

(2008) Won Jun Park et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates

(2008) H. Frenzel et al.   APPLIED PHYSICS LETTERS

Surface modification of ZnO film by hydrogen peroxide solution

(2008) Chia-Hung Tsai et al.   JOURNAL OF APPLIED PHYSICS

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS