Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Resistive switching characteristics of nickel silicide layer embedded HfO2 film

(2012) Debashis Panda et al.   APPLIED PHYSICS LETTERS

Effect of Solution-Processed NiO Thin Film as a Hole Transport Layer in Poly(3-hexylthiophene): [6,6]-Phenyl C61-Butyric Acid Methyl Ester Bulk Heterojunction Solar Cells

(2012) Joohye Jung et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

(2011) Byungjin Cho et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

(2011) Debashis Panda et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Resistive random access memory utilizing ferritin protein with Pt nanoparticles

(2011) Mutsunori Uenuma et al.   NANOTECHNOLOGY

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

(2010) Jung Ho Yoon et al.   APPLIED PHYSICS LETTERS

Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films

(2010) D. Panda et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

Properties of highly crystalline NiO and Ni nanoparticles prepared by high-temperature oxidation and reduction

(2010) Mikhail Feygenson et al.   PHYSICAL REVIEW B

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

(2008) Chanwoo Park et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

(2008) Li-Feng Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

(2008) Gun Hee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY