Band alignment of h-BN/β-Ga2O3 heterostructure grown via ion beam sputtering deposition

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

(2022) Jingren Chen et al.   ACS Applied Materials & Interfaces

Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs

(2022) Xiao-Xi Li et al.   Journal of Physical Chemistry Letters

Progresses in state-of-the-art technologies of Ga2O3 devices

(2021) Chenlu Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

(2021) Seokho Moon et al.   ACS Applied Materials & Interfaces

Structure, Properties and Applications of Two‐Dimensional Hexagonal Boron Nitride

(2021) Soumyabrata Roy et al.   ADVANCED MATERIALS

Band offset and electrical properties of ErZO/β-Ga2O3 and GZO/β-Ga2O3 heterojunctions

(2021) Ying-Li Shi et al.   APPLIED SURFACE SCIENCE

Study on the interface electronic properties of AlN(0001)/ β-Ga2O3(100)

(2021) Xiaomin He et al.   Surfaces and Interfaces

Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping

(2020) Kang Song et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application

(2020) Zhaoqing Feng et al.   APPLIED PHYSICS LETTERS

A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

(2020) H. H. Gong et al.   APPLIED PHYSICS LETTERS

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions

(2020) Hehe Gong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate

(2020) Xu Yang et al.   ACS Applied Materials & Interfaces

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

(2019) Donghua Liu et al.   Nature Communications

Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction

(2019) Mingzhu Chen et al.   OPTICS EXPRESS

Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction

(2019) Hagyoul Bae et al.   ACS Omega

Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy

(2019) Sahadeb Ghosh et al.   APPLIED PHYSICS LETTERS

High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication

(2018) Richeng Lin et al.   ACS Applied Materials & Interfaces

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

(2018) Jinho Bae et al.   APPLIED PHYSICS LETTERS

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

(2018) Jin-Xin Chen et al.   APPLIED PHYSICS LETTERS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

(2018) Janghyuk Kim et al.   ACS Applied Materials & Interfaces

Self-powered solar-blind photodetector based on MoS2/β-Ga2O3 heterojunction

(2018) Ranran Zhuo et al.   Journal of Materials Chemistry C

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction

(2018) Daoyou Guo et al.   ACS Nano

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

(2018) Shin-ichi Kan et al.   APPLIED PHYSICS LETTERS

Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film

(2017) Junhua Meng et al.   Small

Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application

(2016) Wei-Yu Kong et al.   ADVANCED MATERIALS

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

(2016) A. A. Tonkikh et al.   Scientific Reports

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

(2015) Haikel Sediri et al.   Scientific Reports

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

(2012) M. Perego et al.   APPLIED PHYSICS LETTERS

Composition and bonding structure of boron nitride B1−xNx thin films grown by ion-beam assisted evaporation

(2011) Ignacio Caretti et al.   CHEMICAL PHYSICS LETTERS