Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

(2017) Long Sun et al.   Nanoscale Research Letters

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

(2017) Long Sun et al.   Nanoscale Research Letters

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

(2016) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

(2016) Mai Hattori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Large conduction band offset at SiO2/β-Ga2O3heterojunction determined by X-ray photoelectron spectroscopy

(2016) Keita Konishi et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3

(2016) Virginia D. Wheeler et al.   ECS Journal of Solid State Science and Technology

Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

(2016) Sooyeoun Oh et al.   Journal of Materials Chemistry C

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

(2015) Ye Jia et al.   APPLIED PHYSICS LETTERS

Lattice thermal conductivity in β-Ga2O3 from first principles

(2015) Marco D. Santia et al.   APPLIED PHYSICS LETTERS

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Temperature-dependent thermal conductivity in Mg-doped and undopedβ-Ga2O3bulk-crystals

(2015) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

(2014) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures

(2011) Mustafa Alevli et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

(2010) Naohiro Tsurumi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy

(2009) A. L. Yang et al.   APPLIED PHYSICS LETTERS

Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation

(2009) Nariaki Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

(2008) T. D. Veal et al.   APPLIED PHYSICS LETTERS

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Enhanced field emission from Si doped nanocrystalline AlN thin films

(2008) R. Thapa et al.   APPLIED SURFACE SCIENCE

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy

(2008) Leland Rosenberger et al.   SURFACE AND INTERFACE ANALYSIS

Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

(2007) Shigeo Ohira et al.   THIN SOLID FILMS