High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga 2 O 3 Micro-Flake

(2017) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3

(2017) Shihyun Ahn et al.   ECS Journal of Solid State Science and Technology

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

(2016) Wei Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

(2016) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Raman tensor elements of β-Ga2O3

(2016) Christian Kranert et al.   Scientific Reports

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Temperature-dependent electrical characterization of exfoliatedβ-Ga2O3micro flakes

(2014) R. Mitdank et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts

(2014) Rujia Zou et al.   Small

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

(2014) Andres Castellanos-Gomez et al.   2D Materials

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS