Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping

Published 2020 View Full Article

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Title
Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2020-04-28
DOI
10.1088/1361-6463/ab8d6e

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